Outline
Day 1: Electrons and Holes in Semiconductors
• Quantum Mechanics
- Schroedinger’s Wave Equation and energy levels • Band Theory of Solids
- Valence and conduction energy bands, Fermi-Dirac distribution, generation and recombination, intrinsic carriers, direct and indirect materials • Doping in Semiconductors
- Donor and acceptor levels, Fermi Level, Law of Mass Action • Advanced Concepts (as class interest dictates)
- k-space, density of states, effective mass, Brilloun zones • Carrier Transport
- Drift and mobility, excess carriers and diffusion, Carrier Continuity Equation, concept of a plasma
Day Two: PN Junctions
• PN junction at equilibrium
- depletion region, built-in potential, band curvature • PN junction at reverse bias
- thermal saturation current, avalanche breakdown (as class interest dictates) • PN junction at forward bias
- minority injection, diffusion current, Law of the Junction, Carrier Continuity and diode I-V relation • Circuit properties
- junction capacitance and conductance • Schottky diodes
- M-S junction, switching speed, reverse leakage
Day 3: Bipolar Transistors and FETs
Transistor Structure
• BJT in Saturation
- bias state, Carrier Continuity in base, injection efficiency, Beta • Other effects in BJTs
- base width modulation and the Early Effect, doping gradients • Circuit properties of BJTs
- small signal model with major and secondary effects, intrinsic and extrinsic elements • FET basics
- Gradual Channel Approximation and Threshold Voltage • Microwave FET Structures
- Short channel effects and Schottky gate
Device Materials
• Characteristics of Microwave Materials • Silicon, GaAs, InP • Hybrid Materials and Special Transistor Structures
- SiGe, HEMT, HBT • Device Fabrication
- Diffusion, Ion Implantation, Epitaxial Growth • Fabrication Issues
- Parasitic Transistors and latchup, traps, surface states, hydrogen poisoning