Jayasimha Prasad
Dr. Prasad obtained his Ph.D in Electrical Engineering from Oregon State University, Corvallis. For the past two years, he has been with SuVolta as Director of Device Technology. He has spent a considerable part of his career engaged in developing high-speed GaAs and SiGe HBT technology. He was with Tektronix for 12 years developing GaAs-based HBT technology for high-speed oscilloscopes. He was a Tektronix Fellow and he was the first in the world to demonstrate a 60GHz InGaP HBT IC technology with 28ps gate delay. He also worked at National Semiconductor, Micrel Semiconductor and Maxim Integrated Products where he has developed SiGe BiCMOS processes for wireless and fiber optic applications which have resulted in several products. Prior to the HBT work, Prasad has developed E2PROM processes at National Semiconductor and contributed to VMOS processes at AMI Semiconductor. Prasad is an IEEE Fellow and a Distinguished Lecturer of IEEE Electron Devices Society. He served in the advisory committees for research programs at University of Illinois, Urbana-Champaign and University of Washington, Seattle. He is a member of the IEEE technical committees on Compound Semiconductor Devices, Compact Modeling and Education. He serves in the IEEE Technical Field Awards and Fellow evaluation committees. Prasad has been serving in the technical committees of BCTM and IEDM. Prasad was an Adjunct Professor at Oregon State University and Santa Clara University.
